Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source
نویسندگان
چکیده
In this paper, utilising the non-equilibrium Green’s function (NEGF) formalism within new device simulator NESS (Nano-Electronic Software Simulator) developed at University of Glasgow’s Device Modelling Group, we present quantum mechanical simulations current flow in double-barrier III-V GaAs-AlGaAs nanowire resonant tunneling diodes (RTDs). is a fast and modular Technology Computer Aided Design (TCAD) tool with flexible architecture which can take into account various sources statistical variability nanodevices. The aim work to show that, RTD devices nano-scale dimensions, there direct correlation between position numbers random dopants key parameters, e.g., resonant-peak (VR) variations as well shape number peaks output current–voltage (I-V) characteristics. Such VR be used fingerprint provide robust security hence deliver Physical Unclonable Functions (PUFs).
منابع مشابه
Electronic properties of core-shell nanowire resonant tunneling diodes
The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells ...
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2022
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2022.108339